Effect of RF pulsing biasing on the etching of magnetic tunnel junction materials using CH3OH.

Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma

The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...

Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas

The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...

Etch characteristics of magnetic tunnel junction materials using substrate heating in the pulse-biased inductively coupled plasma

Multiple junction biasing of superconducting tunnel junction detectors

We describe a biasing scheme for single-photon detectors based on superconducting tunnel junctions. It replaces a single detector junction with a circuit of three junctions and achieves biasing of a detector junction at subgap currents without the use of an external magnetic field. The biasing occurs through the nonlinear interaction of the three junctions, which we demonstrate through numerica...

Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, ...